Light emitting device and method for manufacturing the same

ABSTRACT

A light emitting device including a substrate, a first pad, a second pad, a light emitting diode, a first connection structure, a second connection structure, and a patterned adhesive layer and a method for manufacturing the same are provided. The first pad and the second pad are located on the substrate. The light emitting diode includes a first semiconductor layer, a second semiconductor layer overlapping the first semiconductor layer, a first electrode and a second electrode. The first electrode and the second electrode are respectively connected to the first semiconductor layer and the second semiconductor layer. The first connection structure electrically connects the first electrode to the first pad. The second connection structure electrically connects the second electrode to the second pad. The patterned adhesive layer is located between the substrate and the light emitting diode and does not contact the first connection structure and the second connection structure.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of Taiwanese applicationserial no. 109119786, filed on Jun. 12, 2020. The entirety of theabove-mentioned patent application is hereby incorporated by referenceherein and made a part of this specification.

BACKGROUND Technical Field

The disclosure relates to a light emitting device, and in particularrelates to a light emitting device having a light emitting diode.

Description of Related Art

Light emitting diode displays have advantages of high brightness, lowpower consumption, high resolution, high color saturation, and the like.Therefore, many manufacturers are committed to the development oftechnology related to the light emitting diode display. Currently, manytechnical bottlenecks still await to be overcome during the developmentof light emitting diode displays, among which mass transfer technologyis one of the most critical. Mass transfer technology is a technologythat transfers micro light emitting diodes from the growing substrate tothe active device substrate. Since a large number of micro lightemitting diodes are to be transferred at the same time, accuracy inaligning the micro light emitting diodes is especially important. Inexisting technology, the micro light emitting diode are often deviatedduring the transfer process, preventing the micro light emitting diodeson pixel array substrates from normal operation.

SUMMARY

The disclosure provides a light emitting device that increases alignmentaccuracy of the light emitting diode.

The disclosure provides a method for manufacturing a light emittingdevice that increases alignment accuracy of the light emitting diode.

At least one embodiment of the disclosure provides a light emittingdevice, including a substrate, a first pad, a second pad, a lightemitting diode, a first connection structure, a second connectionstructure, and a patterned adhesive layer. The first pad and second padare located on the substrate. The light emitting diode includes a firstsemiconductor layer, a second semiconductor layer overlapping the firstsemiconductor layer, a first electrode, and a second electrode. Thefirst electrode and the second electrode are respectively connected tothe first semiconductor layer and the second semiconductor layer. Thefirst connection structure electrically connects the first electrode tothe first pad. The second connection structure electrically connects thesecond electrode to the second pad. The patterned adhesive layer islocated between the substrate and the light emitting diode and does notcontact the first connection structure and the second connectionstructure.

At least one embodiment of the disclosure provides a method formanufacturing a light emitting device, including the following. A firstpad and a second pad are provided on a substrate. A first conductivestructure and a second conductive structure are respectively formed onthe first pad and the second pad. An adhesive material layer is formedon the substrate. A soft-baking process is performed on the adhesivematerial layer, and the adhesive material layer is patterned, where thepatterned adhesive material layer does not contact the first conductivestructure and the second conductive structure. A light emitting diode isplaced on the patterned adhesive material layer. The light emittingdiode includes a first semiconductor layer, a second semiconductor layeroverlapping the first semiconductor layer, a first electrode and asecond electrode. The first electrode and the second electrode arerespectively connected to the first semiconductor layer and the secondsemiconductor layer, and the first electrode and the second electrodeare respectively connected to the first conductive structure and thesecond conductive structure.

To make the aforementioned more comprehensible, several embodimentsaccompanied with drawings are described in detail as follows.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the disclosure, and are incorporated in and constitutea part of this specification. The drawings illustrate exemplaryembodiments of the disclosure and, together with the description, serveto explain the principles of the disclosure.

FIG. 1A to FIG. 1K are schematic cross-sectional views of a method formanufacturing a light emitting device according to an embodiment of thedisclosure.

FIG. 2 is a schematic top view of a light emitting device according toan embodiment of the disclosure.

FIG. 3 is a schematic cross-sectional view of a light emitting deviceaccording to an embodiment of the disclosure.

FIG. 4A is a schematic cross-sectional view of a light emitting deviceaccording to an embodiment of the disclosure.

FIG. 4B is a schematic top view of a light emitting diode according toan embodiment of the disclosure.

FIG. 5A is a schematic cross-sectional view of a light emitting deviceaccording to an embodiment of the disclosure.

FIG. 5B is a schematic top view of a light emitting device according toan embodiment of the disclosure.

DESCRIPTION OF THE EMBODIMENTS

FIG. 1A to FIG. 1K are schematic cross-sectional views of a method formanufacturing a light emitting device according to an embodiment of thedisclosure. FIG. 2 is a schematic top view of a light emitting deviceaccording to an embodiment of the disclosure.

With reference to FIG. 1A, a first semiconductor material layer 110 isformed on a growing substrate SB1. A second semiconductor material layer130 is formed on the first semiconductor material layer 110. In thisembodiment, an intervening material layer 120 is also formed on thefirst semiconductor material layer 110 before the second semiconductormaterial layer 130 is formed. The growing substrate SB1, for example, isa sapphire substrate, a gallium phosphide substrate, a gallium arsenidesubstrate, a silicon carbide substrate, or other applicable substrates.The first semiconductor material layer 110 and the second semiconductormaterial layer 130 are respectively semiconductor materials withdifferent types of doping.

With reference to FIG. 1B, the second semiconductor material layer 130and the intervening material layer 120 are patterned to form a secondsemiconductor layer 130′ and a light emitting layer 120′. An opening H1penetrates the second semiconductor layer 130′ and the light emittinglayer 120′, and the opening H1 exposes a top surface of the firstsemiconductor material layer 110.

An insulating layer 140 is formed on a sidewall of the secondsemiconductor layer 130′ and the light emitting layer 120′. Theinsulating layer 140 exposes the top surface of the first semiconductormaterial layer 110 and a top surface of the second semiconductor layer130′. A second electrode 150 is formed on the top surface of the secondsemiconductor layer 130′.

With reference to FIG. 1C, a metal material layer 160 is formed in theopening H1, where the metal material layer 160 contacts the insulatinglayer 140. In some embodiments, the material of the metal material layer160 is different from the material of the second electrode 150, but thedisclosure is not limited thereto. In other embodiments, the material ofthe metal material layer 160 is same as the material of the secondelectrode 150.

With reference to FIG. 1D, the first semiconductor material layer 110and the metal material layer 160 are patterned to form a firstsemiconductor layer 110′ and a first electrode 160′. An opening H2penetrates the first electrode 160′ and the first semiconductor layer110′. In some embodiments, a thickness of the first electrode 160′ isgreater than a thickness of the second electrode 150, which therebyreduces a level height difference between a top surface of the firstelectrode 160′ and a top surface of the second electrode 150.

A light emitting diode L includes the first semiconductor layer 110′,the second semiconductor layer 130′ overlapping the first semiconductorlayer 110′, the first electrode 160′, and the second electrode 150. Thefirst electrode 160′ and the second electrode 150 are respectivelyconnected to the first semiconductor layer 110′ and the secondsemiconductor layer 130′. In this embodiment, the light emitting diode Lfurther includes the light emitting layer 120′ and the insulating layer140. The light emitting layer 120′ is located between the firstsemiconductor layer 110′ and the second semiconductor layer 130′. Theinsulating layer 140 is located on the sidewall of the secondsemiconductor layer 130′ and the light emitting layer 120′ and separatesthe second semiconductor layer 130′ from the first electrode 160′.

With reference to FIG. 1E, the light emitting diode L is transferredonto an interposer substrate SB2, and then the growing substrate SB1 isremoved. The method for removing the growing substrate SB1, for example,includes laser lift-off. In this embodiment, the side of the lightemitting diode L provided with the first electrode 160′ and the secondelectrode 150 faces the interposer substrate SB2.

In this embodiment, the interposer substrate SB2 has a sacrificial layer210, and the light emitting diode L is disposed on the sacrificial layer210.

With reference to FIG. 1F, a tether layer 220 is formed on the lightemitting diode L and the sacrificial layer 210. In this embodiment, thetether layer 220 contacts the first electrode 160′ and the secondsemiconductor layer 130′ of the light emitting diode L, but thedisclosure is not limited thereto. In other embodiments, the tetherlayer 220 contacts the first semiconductor layer 110′ of the lightemitting diode L.

With reference to FIG. 1G, the sacrificial layer 210 is removed, andthen a transfer apparatus T is adopted to lift the light emitting diodeL from the interposer substrate SB2. In this embodiment, the tetherlayer 220 remains on the interposer substrate SB2. In other embodiments,a part of the tether layer 220 remains on the interposer substrate SB2,and another part of the tether layer 220 is lifted along with the lightemitting diode L by the transfer apparatus T. In this embodiment, thematerial of the transfer apparatus T, for example, includespolydimethylsiloxane (PDMS), and the transfer apparatus T lifts thelight emitting diode L with the Van der Waals force between the transferapparatus T and the light emitting diode L. In other embodiments, thetransfer apparatus T lifts the light emitting diode L with, for example,vacuum attraction, static electricity, or the like.

With reference to FIG. 1H, a first pad 354 and a second pad 352 areprovided on a substrate SB3. In this embodiment, a switch element 320and a common signal line 330 are located on the substrate SB3.

The switch element 320 includes a gate G, a channel layer CH, a sourceS, and a drain D. The gate G is located on the substrate SB3. A gateinsulating layer 310 is located on the gate G. The channel layer CH islocated on the gate insulating layer 310 and overlaps the gate G. Thesource S and the drain D are located on the channel layer CH and areelectrically connected to the channel layer CH.

In this embodiment, the switch element 320 is a bottom gate type thinfilm transistor, but the disclosure is not limited thereto. In otherembodiments, the switch element 320 is a top gate type thin filmtransistor, a double gate type thin film transistor, or a thin filmtransistor in any other form.

The common signal line 330, the source S, and the drain D are located onthe gate insulating layer 310, and a planarization layer 340 is locatedon the common signal line 330, the source S, and the drain D. The firstpad 354 and the second pad 352 penetrate the planarization layer 340,where the second pad 352 is electrically connected to the drain D of theswitch element 320, and the first pad 354 is electrically connected tothe common signal line 330. In other embodiments, the first pad 354 iselectrically connected to the drain D of the switch element 320, and thesecond pad 352 is electrically connected to the common signal line 330.

The first pad 354 and the second pad 352 include conductive materials.For example, the materials of the first pad 354 and the second pad 352are metal oxide conductive materials.

A first conductive structure 364 and a second conductive structure 362are respectively formed on the first pad 354 and the second pad 352. Thematerials of the first conductive structure 364 and the secondconductive structure 362 are, for example, solder, alloy, conductivemetal, conductive organic matter, or other suitable materials.

An adhesive material layer 370 is formed on the substrate SB3. In thisembodiment, the method for forming the adhesive material layer 370includes, for example, a coating process. In addition, the adhesivematerial 370 covers the first conductive structure 364 and the secondconductive structure 362. In some embodiments, the material of theadhesive material layer 370 includes a photoresist, such as a positivephotoresist or a negative photoresist.

With reference to FIG. 1I, a soft-baking process is performed on theadhesive material layer 370 to remove excess solvent in the adhesivematerial layer 370. In some embodiments, a temperature of thesoft-baking process is 60 degrees Celsius to 140 degrees Celsius.

An exposure and development process is performed on the adhesivematerial layer 370 to form a patterned adhesive material layer 370′. Thepatterned adhesive material layer 370′ does not contact the firstconductive structure 364 and the second conductive structure 362. Inother words, the patterned adhesive material layer 370′ exposes thefirst conductive structure 364 and the second conductive structure 362.

In some embodiments, a height Z1 of the patterned adhesive materiallayer 370′ is higher than a height Z2 of the first conductive structure364 and the second conductive structure 362. For example, the height Z1of the patterned adhesive material layer 370′ is 1 μm to 2 μm, and theheight Z2 of the first conductive structure 364 and the secondconductive structure 362 is 0.8 μm to 1.8 μm.

With reference to FIG. 1J, the light emitting diode L is placed on thepatterned adhesive material layer 370′ by the transfer apparatus T. Inthis embodiment, since the patterned adhesive material layer 370′ isviscous in a normal temperature (or room temperature) environment,therefore, the light emitting diode L can be stuck without being weldedwith the first conductive structure 364 and the second conductivestructure 362. In other words, when the light emitting diode L istransferred, the light emitting diode L can be adhered to the patternedadhesive material layer 370′ without additionally increasing thetemperature. In some embodiments, the light emitting diode L is pressedinto the patterned adhesive material layer 370′ so that the lightemitting diode L contacts the first conductive structure 364 and thesecond conductive structure 362. For example, the first electrode 160′and the second electrode 150 are electrically connected to the firstconductive structure 364 and the second conductive structure 362,respectively.

In this embodiment, an adhesive force between the patterned adhesivematerial layer 370′ and the light emitting diode L is greater than anadhesive force between the transfer apparatus T and the light emittingdiode L.

With reference to FIG. 1K and FIG. 2, the transfer apparatus T isremoved, and then the patterned adhesive material layer 370′ is heatedto be cured into a patterned adhesive layer 370″. When the patternedadhesive layer 370″ is formed, the first conductive structure 364 iswelded with the first electrode 160′ to form a first connectionstructure 364′ that electrically connects the first electrode 160′ tothe first pad 354, and the second conductive structure 362 is weldedwith the second electrode 150 to form a second connection structure 362′that electrically connects the second electrode 150 to the second pad352. Thus far, a light emitting device 10 is substantially completed.

In this embodiment, a thickness T1 of the first connection structure364′ and a thickness T2 of the second connection structure 362′ aresmaller than a thickness T3 of the second semiconductor layer 130′, butthe disclosure is not limited thereto. In other embodiments, thethickness T1 of the first connection structure 364′ is greater than thethickness T2 of the second connection structure 362′, and the thicknessT2 of the second connection structure 362′ is greater than or equal tothe thickness T3 of the second semiconductor layer 130′.

In some embodiments, a curing temperature of the patterned adhesivematerial layer 370′ is greater than a fusion temperature of the firstconductive structure 364 and the second conductive structure 362. Sincethe curing temperature of the patterned adhesive material layer 370′ isgreater than the fusion temperature of the first conductive structure364 and the second conductive structure 362, the patterned adhesivematerial layer 370′ do not crack easily due to excessively hightemperature during the welding process of the conductive structure andthe electrode. In some embodiments, the fusion temperature of the firstconductive structure 364 and the second conductive structure 362 is 150degrees Celsius to 250 degrees Celsius. In some embodiments, the curingtemperature of the patterned adhesive material layer 370′ is 180 degreesCelsius to 280 degrees Celsius.

In this embodiment, a patterned adhesive layer 370″ surrounds the secondconnection structure 362′, and a distance X1 between the patternedadhesive layer 370″ and the second connection structure 362′ is, forexample, greater than 0.3 μm and less than 3 μm. In some embodiments, adistance X2 between the patterned adhesive layer 370″ and the second pad352 is, for example, greater than 0.3 μm and less than 3 μm. In someembodiments, a distance X3 between the patterned adhesive layer 370″ andthe first connection structure 364′ is, for example, greater than 0.3 μmand less than 3 μm. In some embodiments, a distance X4 between thepatterned adhesive layer 370″ and the first pad 354 is, for example,greater than 0.3 μm and less than 3 μm.

In some embodiments, the shape of the patterned adhesive layer 370″includes a circle, a square, a polygon, or any other geometric shape. Inaddition, the patterned adhesive layer 370″ is a closed ring or anon-closed ring. A level height of a top surface of the patternedadhesive layer 370″ is lower than a level height of the light emittinglayer 120′ of the light emitting diode L, which thereby reduces negativeeffects of the patterned adhesive layer 370″ on the luminous efficiency.In some embodiments, a width of the patterned adhesive layer 370″ issmaller than a width of a single sub-pixel.

Based on the foregoing, it is possible to prevent misalignment of thelight emitting diode L resulting from deformation of the transferapparatus T due to the heating process. Besides, no additional heatingis required when the light emitting diode L is being transferred, whichnot only greatly reduces process time for pressure welding, but alsoavoids adhesive material contamination during pressure welding.

FIG. 3 is a schematic cross-sectional view of a light emitting deviceaccording to an embodiment of the disclosure. It should be noted thatthe reference numerals and part of the content of the embodiment of FIG.1A to FIG. 2 remain to be used in the embodiment of FIG. 3, the same orsimilar reference numerals are adopted to represent the same or similarelements, and description of the same technical content is omitted.Reference may be made to the above-mentioned embodiment for thedescription of the omitted part, which will not be repeated herein.

With reference to FIG. 3, in a light emitting device 20, a surface ofthe substrate SB3 is provided with a bump 380, and the first pad 354 isdisposed on the bump 380.

In some embodiments, a height difference h1 is present between a topsurface of the first semiconductor layer 110′ and the top surface of thesecond semiconductor layer 130′, and a difference between a height h2 ofthe bump 380 and the height difference h1 is less than or equal to 1 μm,such as 0.3 μm to 0.5 μm.

By disposing the bump 380, a difference between a thickness of the firstelectrode 160′ and a thickness of the second electrode 150 of the lightemitting diode L can be reduced. In some embodiments, the thickness ofthe first electrode 160′ are approximately the same as the thickness ofthe second electrode 150, and the first electrode 160′ and the secondelectrode 150 are formed at the same time.

Based on the foregoing, it is possible to prevent misalignment of thelight emitting diode L resulting from deformation of the transferapparatus T due to the heating process. Besides, no additional heatingis required when the light emitting diode L is being transferred, whichnot only greatly reduces process time for pressure welding, but alsoavoids adhesive material contamination during pressure welding.

FIG. 4A is a schematic cross-sectional view of a light emitting deviceaccording to an embodiment of the disclosure. FIG. 4B is a schematic topview of a light emitting diode according to an embodiment of thedisclosure. It should be noted that the reference numerals and part ofthe content of the embodiment of FIG. 3 remain to be used in theembodiment of FIG. 4A and FIG. 4B, the same or similar referencenumerals are adopted to represent the same or similar elements, anddescription of the same technical content is omitted. Reference may bemade to the above-mentioned embodiment for the description of theomitted part, which will not be repeated herein.

With reference to FIG. 4A and FIG. 4B, in a light emitting device 30,the light emitting diode L1 further includes a third electrode 164. Thethird electrode 164, for example, is formed at the same time as a firstelectrode 162. The first electrode 162 and the third electrode 164 areconnected to the first semiconductor layer 110′, and the first electrode162 and the third electrode 164 are separated from the secondsemiconductor layer 130′ by the insulating layer 140. The secondsemiconductor layer 130′ is located between the first electrode 162 andthe third electrode 164. In this embodiment, the light emitting diode L1has a bilaterally symmetrical structure, to thereby improve warping toone side of the light emitting diode L1 generated during transfer andpressuring.

The first pad 354, the second pad 352 and a third pad 356 are located onthe substrate SB3. The surface of the substrate SB3 is provided with abump 384 and a bump 386. The first pad 354 is disposed on the bump 384,and the third pad 356 is disposed on the bump 386.

The first electrode 162 is welded to the first connection structure364′, and is electrically connected to the first pad 354 through thefirst connection structure 364′. The second electrode 150 is welded tothe second connection structure 362′, and is electrically connected tothe second pad 352 through the second connection structure 362′. Thethird electrode 164 is welded to a third connection structure 366′, andis electrically connected to the third pad 356 through the thirdconnection structure 366′.

In this embodiment, the patterned adhesive layer 170″ is located betweenthe second connection structure 362′ and the first connection structure364′ and between the second connection structure 362′ and the thirdconnection structure 366′.

In this embodiment, the first electrode 162 and the third electrode 164are electrically connected to the common signal line 330, and the secondelectrode 150 is electrically connected to the drain D of the switchelement. In other embodiments, the first electrode 162 and the thirdelectrode 164 are electrically connected to the drain D of the switchelement, and the second electrode 150 is electrically connected to thecommon signal line 330.

Based on the foregoing, it is possible to prevent misalignment of thelight emitting diode L resulting from deformation of the transferapparatus due to the heating process. Besides, no additional heating isrequired when the light emitting diode L is being transferred, which notonly greatly reduces process time for pressure welding, but also avoidsadhesive material contamination during pressure welding.

FIG. 5A is a schematic cross-sectional view of a light emitting deviceaccording to an embodiment of the disclosure. FIG. 5B is a schematic topview of a light emitting device according to an embodiment of thedisclosure. It should be noted that the reference numerals and part ofthe content of the embodiment of FIG. 3 remain to be used in theembodiment of FIG. 5A and FIG. 5B, the same or similar referencenumerals are adopted to represent the same or similar elements, anddescription of the same technical content is omitted. Reference may bemade to the above-mentioned embodiment for the description of theomitted part, which will not be repeated herein.

With reference to FIG. 5A and FIG. 5B, in a light emitting device 40, alight emitting diode L2 further includes a third electrode 154, a thirdsemiconductor layer 134, and a light emitting layer 124. For example,the light emitting layer 124 is formed at the same time as a lightemitting layer 122, the third semiconductor layer 134 is formed at thesame time as a second semiconductor layer 132, and the third electrode154 is formed at the same time as a second electrode 152. The secondsemiconductor layer 132 and the third semiconductor layer 134 arerespectively located on the light emitting layer 122 and the lightemitting layer 124, and the second electrode 152 and the third electrode154 are respectively connected to the second semiconductor layer 132 andthe third semiconductor layer 134. The first electrode 160′ is locatedbetween the third semiconductor layer 134 and the second semiconductorlayer 132, and is separated from the third semiconductor layer 134 andthe second semiconductor layer 132 by the insulating layer 140. In thisembodiment, the light emitting diode L2 has a bilaterally symmetricalstructure, to thereby improve warping to one side of the light emittingdiode L2 generated during transfer and pressuring.

The first electrode 160′ is welded to the first connection structure364′, and is electrically connected to the first pad 354 through thefirst connection structure 364′. The second electrode 152 is welded tothe second connection structure 362′, and is electrically connected tothe second pad 352 through the second connection structure 362′. Thethird electrode 154 is welded to the third connection structure 366′,and is electrically connected to the third pad 356 through the thirdconnection structure 366′.

In this embodiment, a patterned adhesive layer 372 surrounds the secondconnection structure 362′ and is located between the second connectionstructure 362′ and the first connection structure 364′. The patternedadhesive layer 374 surrounds the third connection structure 366′ and islocated between the second connection structure 362′ and the thirdconnection structure 366′.

Based on the foregoing, it is possible to prevent misalignment of thelight emitting diode L resulting from deformation of the transferapparatus T due to the heating process. Besides, no additional heatingis required when the light emitting diode L is being transferred, whichnot only greatly reduces process time for pressure welding, but alsoavoids adhesive material contamination during pressure welding.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the disclosed embodimentswithout departing from the scope or spirit of the disclosure. In view ofthe foregoing, it is intended that the disclosure covers modificationsand variations provided that they fall within the scope of the followingclaims and their equivalents.

What is claimed is:
 1. A light emitting device, comprising: a substrate;a first pad and a second pad located on the substrate; a light emittingdiode comprising: a first semiconductor layer and a second semiconductorlayer overlapping the first semiconductor layer; and a first electrodeand a second electrode respectively connected to the first semiconductorlayer and the second semiconductor layer; a first connection structureelectrically connecting the first electrode to the first pad; a secondconnection structure electrically connecting the second electrode to thesecond pad; and a patterned adhesive layer located between the substrateand the light emitting diode and not contacting the first connectionstructure and the second connection structure.
 2. The light emittingdevice according to claim 1, wherein the patterned adhesive layercomprises a cured photoresist.
 3. The light emitting device according toclaim 1, wherein a thickness of the first electrode is greater than athickness of the second electrode.
 4. The light emitting deviceaccording to claim 1, wherein a surface of the substrate is providedwith a bump, and the first pad is disposed on the bump.
 5. The lightemitting device according to claim 1, further comprising a third pad anda third connection structure, wherein the third pad is located on thesubstrate; the light emitting diode further comprises a third electrodeconnected to the first semiconductor layer, wherein the secondsemiconductor layer is located between the first electrode and the thirdelectrode; the third connection structure electrically connects thethird electrode to the third pad; and the patterned adhesive layer islocated between the second connection structure and the third connectionstructure.
 6. The light emitting device according to claim 1, wherein adistance between the patterned adhesive layer and the second connectionstructure, and a distance between the patterned adhesive layer and thesecond pad are greater than 0.3 μm and less than 3 μm.
 7. A method formanufacturing a light emitting device, comprising: providing a first padand a second pad on a substrate; forming a first conductive structureand a second conductive structure respectively on the first pad and thesecond pad; forming an adhesive material layer on the substrate;performing a soft-baking process on the adhesive material layer, andpatterning the adhesive material layer, wherein the patterned adhesivematerial layer does not contact the first conductive structure and thesecond conductive structure; placing a light emitting diode on thepatterned adhesive material layer, wherein the light emitting diodecomprises: a first semiconductor layer and a second semiconductor layeroverlapping the first semiconductor layer; and a first electrode and asecond electrode respectively connected to the first semiconductor layerand the second semiconductor layer, wherein the first electrode and thesecond electrode are respectively connected to the first conductivestructure and the second conductive structure.
 8. The method accordingto claim 7, further comprising: heating the second conductive structureand the first conductive structure to form a second connection structureand a first connection structure, wherein the second connectionstructure electrically connects the second electrode to the second pad,and the first connection structure electrically connects the firstelectrode to the first pad.
 9. The method according to claim 7, whereina method for manufacturing the light emitting diode comprises: forming asecond semiconductor material layer on a first semiconductor materiallayer; patterning the second semiconductor material layer to form thesecond semiconductor layer; forming an insulating layer on a sidewall ofthe second semiconductor layer; forming the second electrode on thesecond semiconductor layer; forming a metal material layer on the firstsemiconductor material layer, wherein the metal material layer contactsthe insulating layer; and patterning the first semiconductor materiallayer and the metal material layer to form the first semiconductor layerand the first electrode.
 10. The method according to claim 7, furthercomprising heating the patterned adhesive material layer to cure thepatterned adhesive material layer into a patterned adhesive layer,wherein a curing temperature of the patterned adhesive material layer isgreater than a fusion temperature of the first conductive structure andthe second conductive structure.
 11. The method according to claim 10,wherein the fusion temperature of the first conductive structure and thesecond conductive structure is 150 degrees Celsius to 250 degreesCelsius.
 12. The method according to claim 10, wherein a temperature ofthe soft-baking process is 60 degrees Celsius to 140 degrees Celsius.13. The method according to claim 10, wherein the method for patterningthe adhesive material layer comprises an exposure and developmentprocess.